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參數(shù)資料
| 型號(hào)： | FDFMA2P029Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.1A, 95mohm |
| 中文描述： | 3100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 352K |
| 代理商： | FDFMA2P029Z |
December 2006
F
M
2006 Fairchild Semiconductor Corporation
FDFMA2P029Z Rev.B
www.fairchildsemi.com
1
FDFMA2P029Z
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
–20V, –3.1A, 95m
Ω
Features
MOSFET
Max r
DS(on)
= 95m
Ω
at V
GS
= –4.5V, I
D
= –3.1A
Max r
DS(on)
= 141m
Ω
at V
GS
= –2.5V, I
D
= –2.5A
Schottky
V
F
< 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with very low on-
state resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–20
±12
–3.1
-6
1.4
0.7
–55 to +150
20
2
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
(Note 1a)
-Pulsed
Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
I
D
A
P
D
W
T
J
, T
STG
V
RRM
I
O
°
C
V
A
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
86
°C/W
Thermal Resistance, Junction to Ambient (Note 1b)
173
Thermal Resistance, Junction to Ambient (Note 1c)
86
Thermal Resistance, Junction to Ambient (Note 1d)
140
Device Marking
.
P29
Device
FDFMA2P029Z
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
MicroFET 2X2
Pin 1
A
NC
D
C
G
S
1
3
2
4
5
6
A
NC
D
C
G
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFMA2P029Z_08 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m |
| FDFMA2P853 | 功能描述:MOSFET MLP 2X2 DUAL INTEGRATED PCH PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853_08 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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