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參數(shù)資料
| 型號： | FDFMA2N028Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 360K |
| 代理商： | FDFMA2N028Z |
F
FDFMA2N028Z Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
20
V
I
D
= 250
μ
A, referenced to 25°C
15
mV/°
C
V
DS
= 16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
0.6
1.0
1.5
V
I
D
= 250
μ
A, referenced to 25°C
–4
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 3.7A
V
GS
= 2.5V, I
D
= 3.3A
V
GS
= 4.5V, I
D
= 3.7A, T
J
= 125°C
V
DS
= 10V, I
D
= 3.7A
37
50
53
16
68
86
90
m
Ω
g
FS
Forward Trans conductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
340
80
60
455
110
90
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 10V, I
D
= 1A
V
GS
= 4.5V, R
GEN
= 6
Ω
8
8
16
16
26
6
6
ns
ns
ns
ns
nC
nC
nC
14
3
4
0.7
1.1
V
DS
= 10V I
D
= 3.7A
V
GS
= 4.5V
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.1
1.2
A
V
ns
nC
V
GS
= 0V, I
S
= 1.1A (Note 2)
0.7
11
2
I
F
= 3.7A, di/dt = 100A/
μ
s
Schottky Diode Characteristics
V
R
Reverse Voltage
I
R
= 1mA
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
20
V
μ
A
mA
I
R
Reverse Leakage
V
R
= 20V
30
10
0.32
0.21
0.37
0.28
300
45
0.37
0.26
0.435
0.33
V
F
Forward Voltage
I
F
= 500mA
V
I
F
= 1A
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| FDFMA2P853 | 功能描述:MOSFET MLP 2X2 DUAL INTEGRATED PCH PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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