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參數(shù)資料
| 型號(hào)： | FDFM2P110 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3.5 A, 20 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-229WEEA |
| 封裝： | 3 X 3 MM, MLP-6 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | FDFM2P110 |
F
FDFM2N111 Rev. C
2
(W)
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
BV
DSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A,
Referenced to 25°C
V
GS
= 0V, V
DS
= 16V
V
GS
=
±
12V, V
DS
= 0V
20
-
-
V
-
12
-
mV/°C
-
-
-
-
1
μ
A
nA
±
100
On Characteristics
V
GS(TH)
V
GS(TH)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
I
D
= 4.0A, V
GS
= 4.5V
I
D
= 3.3A, V
GS
= 2.5V
I
D
= 4.0A, V
GS
= 4.5V,
T
J
= 125°C
V
GS
= 2.5V, V
DS
= 5V
I
D
= 4A, V
DS
= 5V
0.6
1.0
1.5
V
-
-3
-
mV/°C
R
DS(ON)
Static Drain-Source On-Resistance
-
-
54
83
100
150
m
-
74
147
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
10
-
-
-
-
A
S
9.7
(Note 2)
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
-
-
-
-
273
63
37
1.6
-
-
-
-
pF
pF
pF
V
GS
= 0V, f = 1MHz,
Switching Characteristics
(Note 2)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10V, I
D
= 1A
V
GS
= 4.5V, R
GEN
= 6
-
-
-
-
-
-
-
6
7
12
14
20
3.4
3.8
-
-
ns
ns
ns
ns
nC
nC
nC
11
1.7
2.7
0.6
0.9
V
DS
= 10V, I
D
= 4.0A,
V
GS
= 4.5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
-
-
-
-
-
1.4
-1.2
-
-
A
V
ns
nC
V
GS
= 0V, I
S
= 1.4 A (Note 2)
0.8
11
3
I
F
= 4.0A, dI
F
/dt=100A/
μ
s
Schottky Diode Characteristic
V
R
Reverse Voltage
I
R
= 1mA
20
-
-
V
μ
A
mA
V
I
R
Reverse Leakage
V
R
= 5V
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
-
-
100
10
0.39
V
F
Forward Voltage
I
F
= 1A
-
0.32
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|---|---|
| FDFM2P110_0508 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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