參數(shù)資料
型號(hào): FDFC3N108
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
中文描述: 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 6/7頁
文件大?。?/td> 111K
代理商: FDFC3N108
FDFC3N108 Rev C (W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 3.0A
V
DS
= -5V
-10V
-15V
0
100
200
300
400
500
0
5
15
20
V
DS
, DRAIN TO S10
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
0
0.0001
10
20
30
40
50
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100
P
SINGLE PULSE
R
θ
JA
=180
o
C/W
T
A
= 25
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 180 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
F
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