參數(shù)資料
型號： FDFC3N108
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
中文描述： 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/7頁
文件大小： 111K
代理商： FDFC3N108
FDFC3N108 Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V,
V
GS
= 0 V
V
GS
=
±
12 V,
V
DS
= 0 V
I
D
= 250
μ
A
20
V
BV
DSS
T
J
I
DSS
I
GSS
12
mV/
°
C
μ
A
nA
1
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V,
I
D
= 3 A
V
GS
= 2.5 V,
I
D
= 2.5 A
V
GS
= 4.5 V,
I
D
= 3 A, T
J
=125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V,
I
D
= 3 A
I
D
= 250
μ
A
0.5
0.9
–
3
1.5
V
mV/
°
C
56
73
78
10
70
95
106
m
A
S
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
12
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
355
85
45
2.0
pF
pF
pF
V
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
(Note 2)
6
7
20
1
12
14
36
2
ns
ns
ns
ns
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
3.5
0.7
1.0
4.9
nC
nC
nC
V
DS
= 10V,
V
GS
= 4.5 V
I
D
= 3 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Maximum Continuous Drain–Source Diode Forward Current
0.8
1.2
A
V
V
GS
= 0 V,
I
S
= 0.8 A
(Note 2)
12
3
nS
nC
I
F
= 3 A,
d
iF
/d
t
= 100 A/μs
Schottky Diode Characteristic
I
R
Reverse Leakage
T
J
= 25
o
C
T
J
= 100
o
C
250
10
425
550
μ
A
mA
mV
V
R
= 20V
V
F
Forward Voltage
I
F
= 1A
I
F
= 2A
363
449
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFC3N108_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
FDFC3N108_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
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FDFD1-250 制造商:SPC Multicomp 功能描述:CRIMP TERMINAL FEMALE PK100 制造商:SPC Multicomp 功能描述:CRIMP TERMINAL, FEMALE, PK100 制造商:SPC Multicomp 功能描述:TERMINAL, FEMALE DISCONNECT, 6.3MM, RED; Connector Type:Female Disconnect; Series:FDFD; Insulator Color:Red; Termination Method:Crimp; Stud/Tab Size:6.35mm x 0.81mm; Wire Size AWG Min:22AWG; Wire Size AWG Max:16AWG; Voltage AC:415V ;RoHS Compliant: Yes
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