參數(shù)資料
型號(hào)： FDD8580
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
中文描述： 35 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 320K
代理商： FDD8580
F
FDD8580/FDU8580 Rev. A
www.fairchildsemi.com
4
Figure 7.
0
5
10
15
20
0
2
4
6
8
10
V
DD
= 13V
V
DD
= 7V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 10V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
3000
20
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
1
10
100
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
(
A
)
Unclamped Inductive Switching
Capability
Figure 10.
25
50
75
100
125
150
175
0
10
20
30
40
50
60
V
GS
= 10V
V
GS
= 4.5V
I
D
,
T
C
, CASE TEMPERATURE
(
o
C
)
R
θ
JC
= 3.03
o
C/W
CURRENT LIMITED
BY PACKAGE
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
1
10
0.1
1
10
100
500
LIMITED BY
PACKAGE
10us
DC
10ms
1ms
100us
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
TC = 25
O
C
40
Forward Bias Safe Operating Area
Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
10000
P
(
P
)
,
V
GS
= 10V
SINGLE PULSE
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
-------150
C
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8586 功能描述:MOSFET 20V 35A 5.5 OHM NCH DPAK PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD86102 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD86102LZ 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD86102LZ_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100 V, 35 A, 22.5 m??
FDD86110 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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