參數(shù)資料
型號： FDD8580
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
中文描述： 35 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT, DPAK-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 320K
代理商： FDD8580
F
FDD8580/FDU8580 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
20
V
17.3
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16V,
V
GS
= 0V
V
GS
= ±20V
1
μ
A
T
J
= 150
°
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
= 33A
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
V
DS
= 5V,I
D
= 35A
1.2
1.8
2.5
V
-6.3
mV/°C
r
DS(on)
Drain to Source On Resistance
6.6
9.3
9.0
13.0
m
Ω
10.6
14.5
g
FS
Forward Transcondductance
61
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
1085
340
205
1.3
1445
450
310
pF
pF
pF
Ω
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
DD
= 10V, I
D
= 35A
V
GS
= 10V, R
GS
= 27
Ω
7
11
59
34
19
10
3.5
3.9
14
20
94
54
27
14
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 10V
I
D
= 35A
I
g
= 1.0mA
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/
μ
s
I
F
= 35A, di/dt = 100A/
μ
s
0.95
0.85
26
19
1.25
1.2
39
29
V
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Notes:
1:
Pulse time < 30
0
μ
s, Duty cycle = 2%.
2:
Starting T
J
= 25
o
C, L = 0.3mH, I
AS
= 21A ,V
DD
= 18V, V
GS
= 10V.
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