參數(shù)資料
型號: FDD8447L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET 40V, 54A, 8.5mOhm
中文描述: 21 A, 40 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT, DPAK-3
文件頁數(shù): 2/8頁
文件大?。?/td> 147K
代理商: FDD8447L
FDD8447L Rev. B(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy
(Single Pulse)
I
AS
Drain-Source Avalanche Current
E
AS
V
DD
= 40 V, I
D
= 16 A, L=1mH
153
mJ
16
A
Off Characteristics
(Note 2)
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
Δ
BV
DSS
Δ
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
I
D
= 250
μ
A
40
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
35
mV/
°
C
V
DS
= 32 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 14 A
V
GS
= 4.5 V,
I
D
= 11 A
V
GS
= 10 V,
I
D
= 14 A, T
J
=125
°
C
V
DS
= 5 V, I
D
= 14 A
I
D
= 250
μ
A
1
1.9
3
V
–5
mV/
°
C
r
DS
(on)
7
8.5
10.4
58
8.5
11
14
m
Ω
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1970
250
150
1.27
pF
pF
pF
Ω
V
DS
= 20 V, V
GS
= 0 V,
f = 1.0 MHz
f = 1.0 MHz,
V
GS
= 0V
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g (TOT)
Total Gate Charge, V
GS
= 10V
Q
g (TOT)
Total Gate Charge, V
GS
= 5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
12
38
9
37
20
6
7
21
21
61
18
52
28
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 20 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
DS
= 20 V, I
D
= 14 A
F
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