參數(shù)資料
型號： FDD7N20TM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel MOSFET
中文描述： 5 A, 200 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, TO-252AB, DPAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 310K
代理商： FDD7N20TM
F
FDD7N20 / FDU7N20 Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
FDD7N20
FDD7N20
FDU7N20
Device
FDD7N20TM
FDD7N20TF
FDU7N20
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2000
70
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Δ
BV
DSS
/
Δ
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V, T
J
= 25
o
C
200
-
-
V
I
D
= 250
μ
A, Referenced to 25
o
C
-
0.2
-
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 200V, V
GS
=0V
V
DS
= 160V, T
C
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
-
-
-
-
-
-
1
μ
A
μ
A
nA
10
I
GSS
Gate to Body Leakage Current
±100
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 2.5A
V
DS
= 40V, I
D
= 2.5A
(Note 4)
3.0
-
-
-
5.0
0.69
-
V
Ω
S
0.58
6.2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
185
45
5
5
1.7
2.4
250
65
10
6.7
-
-
pF
pF
pF
nC
nC
nC
V
DS
= 160V, I
= 7A
V
= 10V
(Note 4, 5)
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 100V, I
D
= 7A
R
G
= 25
Ω
(Note 4, 5)
-
-
-
-
9
30
13
10
28
70
36
30
ns
ns
ns
ns
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-
-
-
-
-
5
A
A
V
ns
μ
C
20
1.4
-
-
V
GS
= 0V, I
SD
= 5A
V
GS
= 0V, I
SD
= 7A
dI
F
/dt = 100A/
μ
s
(Note 4)
120
0.4
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L =5mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25
°
C
3. I
SD
≤
5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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