參數(shù)資料
型號: FDD6688S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench SyncFET
中文描述: 88 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數(shù): 7/8頁
文件大?。?/td> 181K
代理商: FDD6688S
FDD6688S Rev. C (W)
V
DS
L
Figure 15. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive
Waveforms
Figure 20. Switching Time
Waveforms
R
GE
DUT
V
GS
I
AS
0.01
V
DD
+
-
tp
0V
vary t
to obtain
required peak I
AS
V
GS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
Figure 19. Switching Time Test
Circuit
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1
μ
s
Duty Cycle
0.1
%
V
GS
+
-
t
r
t
f
t
d(ON)
t
d(OFF
)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
V
GS
Q
GS
Q
GD
Q
10V
Charge, (nC)
DUT
V
DD
V
GS
I
g(REF
+
-
+
-
Same type as
Drain Current
1
μ
F
10
μ
F
10V
50k
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6690 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6690A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD6690A_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6690S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube