參數(shù)資料
型號: FDU6696
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 13 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: IPAK-3
文件頁數(shù): 1/5頁
文件大?。?/td> 109K
代理商: FDU6696
December 2002
2002 Fairchild Semiconductor Corporation
FDD6696/FDU6696 Rev D (W)
FDD6696/FDU6696
30V N-Channel PowerTrench
ò
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
Applications
DC/DC converter
Motor drives
Features
50A, 30 V
R
DS(ON)
= 8.0 m
@ V
GS
= 10 V
R
DS(ON)
= 10.7 m
@ V
GS
= 4.5 V
Low gate charge (17nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Unit
s
V
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
30
±
16
50
13
100
52
3.8
1.6
(Note 3)
A
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
P
D
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD6696
FDD6696
FDU6696
FDU6696
(Note 1)
2.9
40
96
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
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