參數(shù)資料
型號： FDD6688S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench SyncFET
中文描述： 88 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 181K
代理商： FDD6688S
FDS6688S Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
= 21A
501
mJ
A
21
Off Characteristics
Drain–Source Breakdown
Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
BV
DSS
V
GS
= 0 V,
I
D
= 15mA, Referenced to 25
°
C
I
D
= 1mA
30
V
Breakdown Voltage Temperature
30
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
500
±
100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 15mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 18.5 A
V
GS
= 4.5 V, I
D
= 16.5 A
V
GS
= 10 V, I
D
= 18.5 A, T
J
=125
°
C
V
DS
= 5 V,
I
D
= 18.5 A
I
D
= 1mA
1
1.4
–0.3
3
V
mV/
°
C
4.0
4.7
6.0
72
5.1
6.3
7.5
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
3290
pF
C
oss
Output Capacitance
900
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
300
pF
R
G
Gate Resistance
V
GS
= 15 mV,
f = 1.0 MHz
1.6
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
(TOT)
Total Gate Charge at Vgs=10V
Q
g
Total Gate Charge at Vgs=5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
13
13
31
64
58
31
8
10
23
23
50
103
81
44
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DD
= 15 V, I
D
= 18.5 A
F
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相關代理商/技術參數(shù)
參數(shù)描述
FDD6690 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6690A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD6690A_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6690S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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