參數(shù)資料
型號(hào): FDD6637_06
廠商: Fairchild Semiconductor Corporation
英文描述: 35V P-Channel PowerTrench MOSFET
中文描述: 35V的P溝道PowerTrench MOSFET的
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 126K
代理商: FDD6637_06
FDD6637 Rev. C2(W)
www.fairchildsemi.com
Typical Characteristics
0
20
40
60
80
100
0
1
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-6.0V
-5.0V
-4.5V
-3.5V
V
GS
= -10V
-4.0V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
20
40
60
80
100
-I
D
, DRAIN CURRENT (A)
N
D
V
GS
= -3.5V
-5.0V
-6.0V
-8.0V
-10V
-4.5V
-4.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
N
I
D
= -14A
V
GS
= -10V
0
0.01
0.02
0.03
0.04
0.05
2
4
8
10
-V
GS
, GATE TO SO6
R
D
,
I
D
= -7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
20
40
60
80
100
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
F
ò
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