參數(shù)資料
型號(hào)： FDD6637_06
廠商： Fairchild Semiconductor Corporation
英文描述： 35V P-Channel PowerTrench MOSFET
中文描述： 35V的P溝道PowerTrench MOSFET的
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 126K
代理商： FDD6637_06
FDD6637 Rev. C2(W)
www.fairchildsemi.com
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
E
AS
Drain-Source Avalanche Energy
(Single Pulse)
I
AS
Drain-Source Avalanche Current
V
DD
= -35 V, I
D
= -11 A, L=1mH
61
mJ
–14
A
Off Characteristics
(Note 2)
Drain–Source Breakdown
Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain–Source
On–Resistance
BV
DSS
V
GS
= 0 V,
I
D
= –250
μ
A
–35
V
V
DS
= –28 V, V
GS
= 0 V
V
GS
=
±
25 V,
–1
±
100
μ
A
nA
V
DS
= 0 V
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –14 A, T
J
=125
°
C
V
DS
=–5 V, I
D
= –14 A
–1
–1.6
9.7
14.4
14.7
35
–3
11.6
18
19
V
I
D
= –14 A
I
D
= –11 A
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2370
470
250
pF
pF
pF
V
DS
= –20 V,
f = 1.0 MHz
V
GS
= 0 V,
R
G
Gate Resistance
f = 1.0 MHz
3.6
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge, V
GS
= –10V
Q
g
Total Gate Charge, V
GS
= –5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
18
32
ns
10
62
36
45
20
100
58
63
ns
ns
ns
nC
V
DD
= –20 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
25
7
10
35
nC
nC
nC
V
DS
= – 20 V, I
D
= –14 A
F
ò
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6644 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6644S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6670 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6670A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 76A TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:3 ;RoHS Compliant: Yes
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