參數(shù)資料
型號(hào): FDD6635
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 35V N-Channel PowerTrench MOSFET
中文描述: 15 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT, DPAK-3
文件頁數(shù): 5/8頁
文件大?。?/td> 151K
代理商: FDD6635
FDD6635 Rev. C(W)
www.fairchildsemi.com
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 15A
V
DS
= 10V
15V
20V
0
400
800
1200
1600
2000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
10s
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0
20
40
60
80
100
0.1
1
10
100
1000
t
1
, TIME (sec)
I
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
1
10
100
1000
1
10
100
1000
10000
t
AV
, TIME IN AVANCHE(ms)
I
(
,
T
J
= 25
o
C
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
F
M
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