參數(shù)資料
型號: FDD20AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 8 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數(shù): 6/11頁
文件大?。?/td> 608K
代理商: FDD20AN06A0
2003 Fairchild Semiconductor Corporation
FDD20AN06A0 Rev. B
F
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
L
V
DD
Q
g(TH)
Q
gs
V
GS
= 2V
0
Q
gs2
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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相關代理商/技術參數(shù)
參數(shù)描述
FDD20AN06A0_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 45A, 20mW
FDD20AN06A0_F085 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD20AN06A0_Q 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD20AN06A0_SB82095 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD20AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述: