參數(shù)資料
型號： FDD16AN08A0
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
中文描述： 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/11頁
文件大?。?/td> 242K
代理商： FDD16AN08A0
2002 Fairchild Semiconductor Corporation
FDD16AN08A0 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 155
μ
H, I
AS
= 35A.
Device Marking
FDD16AN08A0
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
FDD16AN08A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 60V
V
GS
= 0V
V
GS
=
±
20V
75
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 50A, V
GS
= 10V
I
D
= 25A, V
GS
= 6V
I
D
= 50A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.013
0.019
0.016
0.029
-
0.032
0.037
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1874
290
91
31
4
9.7
5.7
7.2
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 50A
I
g
= 1.0mA
47
6
-
-
-
-
-
-
-
V
DD
= 40V, I
D
= 50A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
8
93
-
-
-
-
81
ns
ns
ns
ns
ns
ns
54
32
22
-
V
SD
Source to Drain Diode Voltage
I
SD
= 50A
I
SD
= 25A
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
34
31
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD16AN08A0_F085 功能描述:MOSFET Trans N-Ch 75V 9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD16AN08A0_NF054 功能描述:MOSFET 75V 50a .16Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD16AN08A0_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
FDD16AN08A0_Q 功能描述:MOSFET 75V 50a .16Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD16AN08LA0 制造商:Fairchild Semiconductor Corporation 功能描述:
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