參數(shù)資料
型號: FDC697P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 1.8V PowerTrench MOSFET
中文描述: 8 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, FLMP, SUPERSOT-6
文件頁數(shù): 4/6頁
文件大?。?/td> 159K
代理商: FDC697P
FDC697P Rev C2 (W)
Typical Characteristics
0
10
20
30
40
0
0.5
1
1.5
2
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
–2.5V
–1.8V
V
GS
= –4.5V
–3V
0.5
1
1.5
2
2.5
3
0
10
20
30
40
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -1.8V
-3.5V
-3.0V
-2.5V
-4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -8A
V
GS
= -4.5V
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -4 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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