參數(shù)資料
型號(hào)： FDC653
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁數(shù)： 3/4頁
文件大?。?/td> 70K
代理商： FDC653
FDC653N Rev.B
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
0
3
6
9
12
15
I
D
V = 10V
3.5
3.0
5.0
4.0
4.5
6.0
0
3
6
9
12
15
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
D
R
D
V =3.5V
4.5
10
4.0
5.0
6.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 5. Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
15
I
S
A
25°C
-55°C
V =0V
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 4. On Resistance
Variation with
Gate-To- Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
R
D
V = 10V
I = 5.0A
2
4
6
8
10
0
0.03
0.06
0.09
0.12
0.15
0.18
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 125°C
A
T = 25°C
I =2A
1.5
2
2.5
3
3.5
4
4.5
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5V
T = -55°C
相關(guān)PDF資料
PDF描述
FDC653N N-Channel Enhancement Mode Field Effect Transistor
FDC654P P-Channel Enhancement Mode Field Effect Transistor
FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET
FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC653N 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC653N_F095 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC653N-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6
FDC654P 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC654P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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