參數(shù)資料
型號： FDC6333C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 30V N & P-Channel PowerTrench MOSFETs
中文描述： 2500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/8頁
文件大小： 98K
代理商： FDC6333C
FDC6333C Rev C (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= 250
μ
A,Ref. to 25
°
C
I
D
= –250
μ
A,Ref. to 25
°
C
V
DS
= 24 V,
V
DS
= –24 V, V
GS
= 0 V
V
GS
= 16 V,
V
GS
= 25 V,
V
GS
= –16 V, V
DS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
–30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
27
–22
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V
1
–1
100
100
–100
–100
μ
A
I
GSSF
Gate–Body Leakage, Forward
V
DS
= 0 V
V
DS
= 0 V
nA
I
GSSR
Gate–Body Leakage, Reverse
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
Q1
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= 250
μ
A,Ref. To 25
°
C
I
D
= –250
μ
A,Ref. to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= 10 V, I
D
= 2.5 A,T
J
=125
°
C
V
GS
= –10 V, I
D
= –2.0 A
V
GS
=– 4.5 V, I
D
= –1.7 A
V
GS
= 10 V, I
D
= –2.0 A,T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
GS
= –10 V, V
DS
= –5 V
V
DS
= 5 V
I
D
= 2.5 A
V
DS
= –5 V
I
D
= –2.0A
1
1.8
3
Q2
–1
–1.8
–3
V
V
GS(th)
T
J
Q1
4
Gate Threshold Voltage
Temperature Coefficient
Q2
Q1
–4
mV/
°
C
R
DS(on)
I
D
= 2.5 A
73
90
106
95
142
149
95
150
148
130
220
216
Static Drain–Source
On–Resistance
Q2
m
I
D(on)
Q1
Q2
Q1
Q2
8
–8
On–State Drain Current
A
g
FS
7
3
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
V
DS
=15 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–15 V, V
GS
= 0 V, f=1.0MHz
V
DS
=15 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–15 V, V
GS
= 0 V, f=1.0MHz
V
DS
=15 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–15 V, V
GS
= 0 V, f=1.0MHz
282
185
49
56
20
26
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
pF
Switching Characteristics
t
d(on)
Turn–On Delay Time
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
4.5
4.5
6
13
19
11
1.5
2
4.7
4.1
0.9
0.8
0.6
0.4
9
9
12
23
34
20
3
4
6.6
5.7
ns
t
r
Turn–On Rise Time
ns
t
d(off)
Turn–Off Delay Time
ns
t
f
Turn–Off Fall Time
For
Q1
:
V
DS
=15 V,
V
GS
= 10 V,
I
DS
= 1 A
R
GEN
= 6
For
Q2
:
V
DS
=–15 V,
V
GS
= –10 V, R
GEN
= 6
I
DS
= –1 A
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate–Source Charge
nC
Q
gd
Gate–Drain Charge
For
Q1
:
V
DS
=15 V,
V
GS
= 10 V,
For
Q2
:
V
DS
=–15 V,
V
GS
= –10 V,
I
DS
= 2.5 A
R
GEN
= 6
I
DS
= –2.0 A
nC
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NP CH 30V 2.5/2A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 30V SUPER SOT-6
FDC6333C_Q 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6333C-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC6333C Series 30 V 95 mOhm N & P-Channel PowerTrench Mosfet - SSOT-6
FDC633N 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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