- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375768 > FDC6318P (FAIRCHILD SEMICONDUCTOR CORP) Dual P-Channel 1.8V PowerTrench Specified MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDC6318P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
| 中文描述： | 2500 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | FDC6318P |
FDC6318P Rev D (W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
=-4.5V
-3.0V
-1.8V
-1.5V
-2.0V
-2.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -1.8V
-2.0V
-2.5V
-3.5V
-4.5V
-3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.5A
V
GS
= -4.5V
0.02
0.08
0.14
0.2
0.26
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC6320 | Dual N & P Channel , Digital FET |
| FDC6320C | Dual N & P Channel , Digital FET |
| FDC6321C | Dual N & P Channel , Digital FET |
| FDC6322 | Dual N & P Channel , Digital FET |
| FDC6322C | Dual N & P Channel , Digital FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6318P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6318P_Q | 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6320 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET |
| FDC6320C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。