參數(shù)資料
型號: FDC6318
廠商: Fairchild Semiconductor Corporation
英文描述: Dual P-Channel 1.8V PowerTrench Specified MOSFET
中文描述: 雙P溝道MOSFET的1.8伏的PowerTrench指定
文件頁數(shù): 4/5頁
文件大?。?/td> 165K
代理商: FDC6318
FDC6318P Rev D (W)
Typical Characteristics
0
1
2
3
4
5
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -2.5A
V
DS
= -4V
-6V
-8V
0
200
400
600
800
0
3
6
9
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 130
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
5
10
15
20
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 130°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 130
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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FDC6320 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET
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