參數(shù)資料
型號(hào)： FDC6312P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Dual P-Channel 1.8V PowerTrench Specified MOSFET
中文描述： 2300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 88K
代理商： FDC6312P
FDC6312P Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A,Referenced to 25
°
C
–11
mV/
°
C
V
DS
= –16 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–0.4
–0.9
–1.5
V
Gate Threshold Voltage
2
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –1.8 V,
V
GS
=–4.5 V, I
D
=–2.3A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V,
I
D
= –2.3 A
I
D
= –1.9 A
I
D
= –1.6 A
92
116
166
112
115
155
225
150
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= –5 V
I
D
= –3.5 A
–7
A
S
5.3
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
467
85
38
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
13
18
8
4.4
1.0
0.8
16
23
32
16
7
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –2.3 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–0.8
A
V
SD
V
GS
= 0 V,
I
S
= –0.8 A
(Note 2)
–0.7
–1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 130
°
C/W when
mounted on a 0.125
in
pad of 2 oz.
copper.
b) 140°/W when mounted
on a .004 in
pad of 2 oz
copper
c) 180°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6312P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDC6318 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual P-Channel 1.8V PowerTrench Specified MOSFET
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