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參數(shù)資料
| 型號： | FDC6305N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 2700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 246K |
| 代理商： | FDC6305N |
F
FDC6305N, Rev. C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
20
V
Breakdown Voltage Temperature
14
mV/
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.4
0.9
-2.7
1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5, I
D
= 2.7 A
V
GS
= 4.5 I
D
= 2.7 A, T
J
= 125
°
C
V
GS
= 2.5 V, I
D
= 2.2 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 2.7 A
0.060
0.095
0.085
0.080
0.128
0.120
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
6
A
S
8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
310
80
40
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
5
15
17
20
10
5
ns
ns
ns
ns
nC
nC
nC
8.5
11
3
3.5
0.55
0.95
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 2.7 A,
V
GS
= 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
0.8
1.2
A
V
V
GS
= 0 V, I
S
= 0.8 A
(Note 2)
0.77
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
is guaranteed by design while R
θ
CA
is determined by the user's board design. Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 130
°
C/W when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°
C/W when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°
C/W on a minimum
mounting pad.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6305N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6 |
| FDC6305N_Q | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6306P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
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