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參數(shù)資料
| 型號： | FDC6305 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 雙N溝道MOSFET的2.5V的指定PowerTrenchTM |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 246K |
| 代理商： | FDC6305 |
F
FDC6305N, Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = 180°C/W
T - T = P * R JA
P(pk)
t
1
t
2
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 2.7A
V
DS
= 5V
10V
15V
0
100
200
300
400
500
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
TA = 25
o
C
0
1
2
3
4
5
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC6305N | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6306P | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDC6308P | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDC6310P | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDC6312P | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6305N | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6305N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6 |
| FDC6305N_Q | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6306P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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