參數(shù)資料
型號(hào): FDC608PZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 5.8 A, 20 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SUPERSOT-6
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 142K
代理商: FDC608PZ
FDC608PZ Rev B (W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -5.8A
V
DS
= -5V
-15V
-10V
0
500
1000
1500
2000
2500
0
2
4
6
8
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
10ms
1ms
0
2
4
6
8
10
0.01
0.1
10
100
t
1
, TI1
P
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 156
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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