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參數(shù)資料
| 型號(hào)： | FDC5614P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 60V P-Channel Logic Level PowerTrench MOSFET(P溝道PowerTrench MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 1112K |
| 代理商： | FDC5614P |
FDC5614P Rev B (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to
25
°
C
V
DS
= –48 V,
V
GS
= 20V,
V
GS
= –20 V
–60
V
Breakdown Voltage Temperature
–49
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–1
–1.6
4
–3
V
mV/
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –3 A T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V,
I
D
= –3 A
I
D
= –2.7 A
82
105
130
100
130
180
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= –5 V
I
D
= –3 A
–20
A
S
8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
759
90
39
pF
pF
pF
V
DS
= –30 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
7
10
19
12
14
20
34
22
ns
ns
ns
ns
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
15
2.5
3.0
24
nC
nC
nC
V
DS
= –30V,
GS
= –10 V
I
D
= –3.0 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
A
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.8
–1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
F
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