參數(shù)資料
型號(hào)： FDC3616N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V N-Channel PowerTrench MOSFET
中文描述： 3.7 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 173K
代理商： FDC3616N
FDC3616N Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
41
107
0.75
nS
nC
A
V
I
F
= 3.7 A,
d
iF
/d
t
= 100 A/μs
2.1
1.2
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
60°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
111°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC3616N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC3616N_Q 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC365P 功能描述:MOSFET -35V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC365P_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench MOSFET
FDC3755C 制造商:ELMEC 功能描述:
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