參數(shù)資料
型號(hào)： FDC3616N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V N-Channel PowerTrench MOSFET
中文描述： 3.7 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 173K
代理商： FDC3616N
FDC3616N Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
Single Pulse,V
DD
= 50 V, I
D
=
3.7A
244
mJ
I
AR
Drain-Source Avalanche Current
3.7
A
Off Characteristics
BV
DSS
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
Drain–Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 80 V,
V
GS
= 0 V
V
DS
= 30 V,
V
GS
= 0 V
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
I
D
= 250
μ
A
100
V
Breakdown Voltage Temperature
114
mV/
°
C
μ
A
μ
A
nA
nA
10
1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On Resistance
g
FS
Forward Transconductance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 3.7 A
V
GS
= 6.0 V, I
D
= 3.5 A
V
GS
= 10 V, I
D
= 3.7 A, T
J
= 125
°
C
V
DS
= 10 V, I
D
= 3.7 A
I
D
= 250
μ
A
2
2.5
–7.4
55
58
104
19
4
V
Gate Threshold Voltage
mV/
°
C
m
S
70
80
139
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1215
72
39
pF
pF
pF
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.1
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
4
28
10
23
4.8
5.4
18
8
45
20
32
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 50 V, I
D
= 3.7 A,
V
GS
= 10 V
F
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