參數(shù)資料
型號： FDB8878
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm
中文描述： 48 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 226K
代理商： FDB8878
F
FDB8878 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A,
Referenced to 25
o
C
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
30
-
-
V
Breakdown Voltage Temp. Coefficient
21
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
-
-
-
-
-
-
1
μ
A
T
A
= 150
o
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
V
GS(TH)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25
o
C
I
D
= 40A, V
GS
= 10V
I
D
= 36A, V
GS
= 4.5V
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
1.2
1.7
2.5
V
-5
mV/
o
C
r
DS(ON)
Drain to Source On Resistance
-
-
12
15
14
18
m
-
19
21
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
927
188
117
3.0
17.1
9.2
2.6
1.7
3.7
1235
250
175
pF
pF
pF
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0V to 10VV
DD
= 15V
V
GS
= 0V to 5V
I
D
= 40A
I
g
= 1.0mA
-
-
-
-
-
23
12
-
-
-
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
255
11.1
244
14.8
35.3
50
383
ns
ns
ns
ns
ns
ns
75
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
I
SD
= 3.2A
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
-
-
-
-
1.1
0.85
14.4
5.1
1.25
1.2
18.8
6.7
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1:
Starting T
= 25°C, V
= 30V, V
= 10V
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
3:
R
is measured with 1.0 in
copper on FR-4 board
4:
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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