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參數(shù)資料
| 型號(hào)： | FDB7030BL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 412K |
| 代理商： | FDB7030BL |
FDP7030BL Rev.C
Typical Electrical Characteristics
(continued)
0
10
20
30
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 30A
V = 5V
10V
15V
0.1
0.3
1
3
10
30
100
200
500
1000
3000
6000
V , DRAIN TO SOURCE VOLTAGE (V)
C
f = 1 MHz
V = 0V
C ss
C s
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0.3
0.5
1
V , DRAIN-SOURCE VOLTAGE (V)
3
5
10
20
40
60
0.5
1
2
5
10
20
50
100
300
I
D
1ms
DC
R Lmt
DS(ON)
V = 10V
SINGLE PULSE
R = 2.3 °C/W
T = 25 °C
GS
100μs
10ms
10μs
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.5
1
10
100
1000
3000
10000
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R =2.3 °C/W
T - T = P * JC
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve.
00
0.001
SINGLE PULSE TIME (SEC)
0.01
0.1
0.5 1
10
300
600
900
1200
1500
P
SINGLE PULSE
R = 2.3 °C/W
T = 25°C
JC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB7030BL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030BLS | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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