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參數(shù)資料
| 型號： | FDB7030BL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管) |
| 中文描述： | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 412K |
| 代理商： | FDB7030BL |
FDP7030BL Rev.C
Typical Electrical Characteristics
0
1
2
3
4
0
25
50
75
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
5.0V
4.5V
4.0V
3.0V
V = 10V
2.5V
3.5V
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 10V
I = 60A
1
2
3
4
5
0
12
24
36
48
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
125°C
T = -55°C
25°C
Figure 5. Transfer Characteristics
.
0
20
40
60
80
100
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
D
4.5V
V = 3.5V
10V
4.0V
6.0V
Figure 1. On-Region Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
1
10
60
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V =0V
2
4
6
8
10
0
0.01
0.02
0.03
0.04
V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = 30A
T = 125° C
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDB7030BL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030BLS | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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