參數(shù)資料
型號： FDB7030BL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管)
中文描述： 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 412K
代理商： FDB7030BL
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 60 A
220
mJ
Maximum Drain-Source Avalanche Current
60
A
BV
DSS
BV
DSS
/
T
J
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
22
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
1
μA
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.5
3
V
Gate Threshold Voltage Temp.Coefficient
-5
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 30 A
0.0073
0.009
T
J
= 125°C
0.011
0.018
V
GS
= 4.5 V, I
D
= 25 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 30 A
0.01
0.012
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
60
A
Forward Transconductance
55
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2400
pF
480
pF
200
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
13
24
nS
Turn - On Rise Time
14
26
nS
Turn - Off Delay Time
43
70
nS
Turn - Off Fall Time
15
27
nS
Total Gate Charge
V
DS
= 15 V , I
D
= 30 A
V
GS
= 5 V
23
33
nC
Gate-Source Charge
7
nC
Gate-Drain Charge
11
nC
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuous Drain-Source Diode Forward Current
(Note 1)
60
A
Maximum Pulsed Drain-Source Diode Forward Current
(Note 1)
180
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 30 A
(Note1)
V
GS
= 0 V, I
= 30 A
dI
F
/dt = 100 A/μs
1
1.3
V
Reverse Recovery Time
22
50
ns
Reverse Recovery Current
0.79
5
A
Notes
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
FDP7030BL Rev.C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB7030BL_Q 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB7030BLS 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB7030L 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB7030L_L86Z 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB7030L_Q 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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