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參數(shù)資料
| 型號(hào)： | FDB6035L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 58 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 413K |
| 代理商： | FDB6035L |
April 1998
FDP6035L/FDB6035L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
FDP6035L
FDB6035L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current - Continuous
58
A
- Pulsed
175
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
75
W
Derate above 25
°
C
0.5
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
J A
Thermal Resistance, Junction-to-Case
2
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP6035L Rev.B
58 A, 30 V. R
DS(ON)
= 0.011
@ V
GS
=10 V
R
DS(ON)
= 0.019
@ V
GS
=4.5 V
.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
S
D
G
1998 Fairchild Semiconductor Corporation
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