參數(shù)資料
型號： FDB52N20TM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 52 A, 200 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝： LEAD FREE, D2PAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 684K
代理商： FDB52N20TM
2
www.fairchildsemi.com
FDB52N20 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.4mH, I
AS
= 52A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
52A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
D
2
-PAK
Reel Size
Tape Width
Quantity
FDB52N20
FDB52N20TM
330mm
24mm
800
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
200
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.2
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
10
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 26A
--
0.041
0.049
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
= 26A
(Note 4)
--
35
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2230
2900
pF
Output Capacitance
--
540
700
pF
Reverse Transfer Capacitance
--
66
100
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Delay Time
V
DD
= 100V, I
D
= 52A
R
G
= 25
(Note 4, 5)
--
53
115
ns
Turn-On Rise Time
--
175
359
ns
Turn-Off Delay Time
--
48
107
ns
Turn-Off Fall Time
--
29
68
ns
Total Gate Charge
V
DS
= 160V, I
D
= 52A
V
GS
= 10V
(Note 4, 5)
--
49
63
nC
Gate-Source Charge
--
19
--
nC
Gate-Drain Charge
--
24
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
52
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
204
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 52A
V
GS
= 0V, I
S
= 52A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
162
--
ns
Reverse Recovery Charge
--
1.3
--
μ
C
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