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參數(shù)資料
| 型號： | FDB045AN08A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз |
| 中文描述： | 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 240K |
| 代理商： | FDB045AN08A0 |
2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
40
80
120
160
200
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
CURRENT LIMITED
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
2000
50
I
D
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
25
175 - T
C
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB045AN08A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB045AN08A0_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 75V, 80A, 4.5mヘ |
| FDB045AN08A0_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0_F085 | 功能描述:MOSFET 75V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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