參數(shù)資料
型號(hào)： FDAF69N25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V N-Channel MOSFET
中文描述： 34 A, 250 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3PF, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 635K
代理商： FDAF69N25
2
www.fairchildsemi.com
FDAF69N25 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.64mH, I
AS
= 69A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
34A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDAF69N25
FDAF69N25
TO-3PF
--
--
30
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
250
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.25
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
10
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 17A
--
0.034
0.041
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
= 17A
(Note 4)
--
25
--
S
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
3570
4640
pF
C
oss
Output Capacitance
--
750
980
pF
C
rss
Reverse Transfer Capacitance
--
84
130
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 125V, I
D
= 69A
R
G
= 25
(Note 4, 5)
--
95
200
ns
t
r
Turn-On Rise Time
--
855
1720
ns
t
d(off)
Turn-Off Delay Time
--
130
270
ns
t
f
Turn-Off Fall Time
--
220
450
ns
Q
g
Total Gate Charge
V
DS
= 200V, I
D
= 69A
V
GS
= 10V
(Note 4, 5)
--
77
100
nC
Q
gs
Gate-Source Charge
--
24
--
nC
Q
gd
Gate-Drain Charge
--
37
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
34
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
136
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 34A
V
GS
= 0V, I
S
= 69A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
210
--
ns
Reverse Recovery Charge
--
5.7
--
μ
C
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