參數(shù)資料
型號(hào): FDAF62N28
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 280V N-Channel MOSFET
中文描述: 36 A, 280 V, 0.051 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PF, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 727K
代理商: FDAF62N28
3
www.fairchildsemi.com
FDAF62N28 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperatue
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
150
175
200
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
Notes :
1. V
= 0V
2. 250μ s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
3000
6000
9000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
V
DS
= 140V
V
DS
= 224V
V
DS
= 56V
Note : I
D
= 62A
V
G
,
Q
G
, Total Gate Charge [nC]
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