參數(shù)資料
型號: FCX493
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
中文描述: 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 16K
代理商: FCX493
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
%
COMPLEMENTARY TYPE –
FCX593
PARTMARKING DETAIL –
N93
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
120
V
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
5
V
Continuous Collector Current
1
A
Peak Pulse Current
2
A
Base Current
200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltages
1
W
-65 to +150
°C
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
MIN.
120
100
5
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=100V
V
CES
=100V
V
EB
=4V
I
C
=500mA, I
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
Collector Cut-Off Currents
100
100
100
0.3
0.6
1.15
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
1.0
V
I
C
=1A, V
CE
=10V
h
FE
100
100
60
20
150
300
I
C
=1mA, V
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
=10V*
I
C
=1A, V
CE
=10V*
I
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
Transition Frequency
f
T
MHz
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
For typical Characteristics graphs see FMMT493 datasheet.
C
obo
10
pF
FCX493
3 - 88
C
C
B
E
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