參數資料
型號: FCX1149
廠商: Zetex Semiconductor
英文描述: PNP SILICON POWER (SWITCHING) TRANSISTOR
中文描述: 進步黨穎電(開關)晶體管
文件頁數: 1/3頁
文件大?。?/td> 108K
代理商: FCX1149
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - SEPTEMBER 1999
FEATURES
*
*
*
*
*
2W POWER DISSIPATION
20A Peak Pulse Current
Excellent H
Characteristics up to 10 Amps
Extremely Low Saturation Voltage E.g. 45mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
67m
at 3A
Partmarking Detail -
149
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-10
A
Continuous Collector Current
I
C
-3
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25°C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1149A
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