參數(shù)資料
型號: FCP11N60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: SuperFET
中文描述: 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 3/10頁
文件大?。?/td> 810K
代理商: FCP11N60
2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
F
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
* Note
1. V
DS
= 40V
2. 250
μ
s Pulse Test
-55
o
C
150
o
C
25
o
C
I
D
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
40
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
D
]
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
* Note : I
D
= 11A
V
G
,
Q
G
, Total Gate Charge [nC]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
25
o
C
150
o
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
相關PDF資料
PDF描述
FCPF16N60 600V N-Channel MOSFET
FCPF20N60 600V N-Channel MOSFET
FCP20N60 600V N-Channel MOSFET
FCR Fusing Surface Mounted Resistors
FCX1047A NPN SILICON POWER (SWITCHING) TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
FCP11N60_Q 功能描述:MOSFET 600V 11A N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCP11N60F 功能描述:MOSFET 600V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCP11N60N 功能描述:MOSFET SupreMOS 11A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCP11N60N_F102 制造商:Fairchild 功能描述:600V N-Channel MOSFET SupreMOS
FCP11N65 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: