參數(shù)資料
型號： FCP11N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： SuperFET
中文描述： 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/10頁
文件大?。?/td> 810K
代理商： FCP11N60
Rev. B, March 2004
F
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
= 5.5A, V
= 50V, R
= 25
,
Starting T
= 25°C
3. I
≤
11A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A, T
J
= 25°C
V
GS
= 0 V, I
D
= 250
μ
A, T
J
= 150°C
600
--
--
--
--
V
V
650
BV
DSS
/
T
J
Breakdown Voltage Temperature Coef-
ficient
Drain-Source Avalanche Breakdown
Voltage
I
D
= 250
μ
A, Referenced to 25°C
--
0.6
--
V/°C
BV
DS
V
GS
= 0 V, I
D
= 11 A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
μ
A
μ
A
nA
nA
10
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
V
GS
= 10 V, I
D
= 5.5 A
--
0.32
0.38
V
DS
= 40 V, I
D
= 5.5 A
(Note 4)
--
9.7
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1148
671
63
1490
870
82
pF
pF
pF
C
oss
Output Capacitance
V
DS
= 480 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 480 V, V
GS
= 0 V
--
35
--
pF
C
oss
eff.
Effective Output Capacitance
--
95
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 300 V, I
D
= 11 A,
R
G
= 25
(Note 4, 5)
--
--
--
--
--
--
--
34
98
119
56
40
7.2
21
80
205
250
120
52
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 480 V, I
D
= 11 A,
V
GS
= 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
11
33
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 11 A
V
GS
= 0 V, I
S
= 11 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
390
5.7
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