參數(shù)資料
型號(hào): FCH47N60F_0605
廠商: Fairchild Semiconductor Corporation
英文描述: 600V N-Channel MOSFET
中文描述: 600V的N溝道MOSFET
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 940K
代理商: FCH47N60F_0605
3
www.fairchildsemi.com
FCH47N60F Rev. B
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
4
6
8
10
10
0
10
1
10
2
- Note
1. V
DS
= 40V
2. 250
μ
s Pulse Test
-55
°
C
150
°
C
25
°
C
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0
20
40
60
80
100
120
140
160
180
200
0.00
0.05
0.10
0.15
0.20
0.25
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
°
C
R
D
Ω
]
I
D
, Drain Current [A]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
25
°
C
150
°
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
0
5000
10000
15000
20000
25000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
50
100
150
200
250
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
* Note : I
D
= 47A
V
G
,
Q
G
, Total Gate Charge [nC]
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