參數(shù)資料
型號(hào)： FCH47N60F_0605
廠商： Fairchild Semiconductor Corporation
英文描述： 600V N-Channel MOSFET
中文描述： 600V的N溝道MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 940K
代理商： FCH47N60F_0605
2006 Fairchild Semiconductor Corporation
FCH47N60F Rev. B
1
www.fairchildsemi.com
F
TM
May 2006
SuperFET
FCH47N60F
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 0.062
Ω
Fast Recovery Type ( t
rr
= 240ns)
Ultra Low Gate Charge (typ. Q
g
= 210nC)
Low Effective Output Capacitance (typ. C
oss
eff. = 420pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
G
S
D
TO-247
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FCH47N60F
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
47
29.7
A
A
I
DM
Drain Current
(Note 1)
141
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1800
mJ
Avalanche Current
(Note 1)
47
A
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
50
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
417
3.33
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.3
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
°C
/
W
Thermal Resistance, Junction-to-Ambient
--
41.7
°
C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FCH47N60N 功能描述:MOSFET 600V N-Chan MOSFET SupreMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCH47N60N_1112 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FCH47N60NF 功能描述:MOSFET 600V N-Chan MOSFET FRFET, SupreMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCH76N60N 功能描述:MOSFET 600V N-Chan MOSFET SupreMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCH76N60N_1112 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET
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