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參數(shù)資料
| 型號(hào)： | FCI7N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 7 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | I2PAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 951K |
| 代理商： | FCI7N60 |
2005 Fairchild Semiconductor Corporation
FCI7N60 Rev. A1
1
www.fairchildsemi.com
F
SuperFET
TM
July 2005
FCI7N60
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 0.53
Ultra Low Gate Charge (typ. Q
g
= 25nC)
Low Effective Output Capacitance (typ. C
oss
eff. = 60pF)
100% Avalanche Tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
z
z
z
D
G
G
S
D
Symbol
Parameter
FCI7N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
7
4.4
A
A
I
DM
Drain Current
(Note 1)
21
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
Avalanche Current
(Note 1)
7
A
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
83
0.67
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FCI7N60
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
1.5
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
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