參數(shù)資料
型號(hào): FC40SA50FK
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 4/8頁
文件大?。?/td> 122K
代理商: FC40SA50FK
4
www.irf.com
I27139- 01/03
FC40SA50FK
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.1
1
10
100
1000
0.2
0.7
1.2
1.7
V
SD
, Source-to-Drain Voltage (V)
I
S
,
V
GS
=0
T
J
=150°C
T
J
=25°C
0
5
10
15
20
0
100
200
300
Q
G
, Total Gate Charge (nC)
V
G
,
I
D
=40A
1
10
100
1000
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
,
100us
10ms
1ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T
C
= 25°C
T
= 150°C
Single Pulse
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