參數(shù)資料
型號： FC40SA50FK
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 122K
代理商： FC40SA50FK
www.irf.com
1
HEXFET
Power MOSFET
R
DS(on)
typ.
0.084
Benefits
!
Low Gate Charge Qg results in Simple
Drive Requirement
!
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
!
Fully Characterized Capacitance and
Avalanche Voltage and Current
!
Low R
DS(on)
!
Fully Insulated Package
Applications
!
Switch Mode Power Supply (SMPS)
!
Uninterruptible Power Supply
!
High Speed Power Switching
!
Hard Switched and High Frequency Circuits
Parameter
Max.
40
26
160
430
3.45
± 30
9.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
"
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
#
Operating Junction and
Storage Temperature Range
A
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J
T
STG
-55 to + 150
Absolute Maximum Ratings
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–
–
–
Max.
1240
40
43
Units
mJ
A
mJ
Single Pulse Avalanche Energy
$
Avalanche Current
"
Repetitive Avalanche Energy
"
Symbol
R
θ
JC
R
θ
CS
Parameter
Typ.
–
0.05
Max.
0.29
–
Units
°C/W
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Thermal Resistance
V
DSS
500V
I
D
40A
SOT-227
FC40SA50FK
I27139- 01/03
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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