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參數(shù)資料
| 型號： | FC40SA50FK |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 122K |
| 代理商： | FC40SA50FK |
2
www.irf.com
I27139- 01/03
FC40SA50FK
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
"
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Parameter
Min. Typ. Max. Units
23
–
–
–
–
–
–
–
–
25
–
140
–
55
–
74
–
8310
–
960
–
120
–
10170
–
240
–
440
Conditions
V
DS
= 50V, I
D
= 28A
I
D
= 40A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
%
V
DD
= 250V
I
D
= 40A
R
G
= 1.0
V
GS
= 10V,See Fig. 10
%
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
'
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–
S
270
84
130
–
–
–
–
–
–
–
–
–
–
nC
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–
–
0.60
–
0.084 0.10
3.0
–
–
–
–
–
–
–
–
–
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
(
V
GS
= 10V, I
D
= 24A
%
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–
–
V
V/°C
V
5.0
50
250
250
-250
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
"
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
$
Starting T
J
= 25°C, L = 1.55mH, R
G
= 25
,
I
AS
= 40A, dv/dt =5.5V/ns (See Figure 12a)
#
I
SD
≤
40A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
%
Pulse width
≤
300μs; duty cycle
≤
2%.
'
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
S
D
G
A
Parameter
Min. Typ. Max. Units
–
–
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 40A, V
GS
= 0V
%
T
J
= 25°C, I
F
= 47A
di/dt = 100A/μs
%
40
–
–
160
–
–
–
1
V
ns
620
940
–
14
21
I
RRM
Reverse Recovery Current
–
38
-
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Q
rr
Reverse Recovery Charge
μC
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