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參數(shù)資料
| 型號(hào)： | FB180SA10 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 137K |
| 代理商： | FB180SA10 |
FB180SA10
www.irf.com
5
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
￡ 1
μs
Duty Factor
￡ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
25
50
T , Case Temperature (°
75
100
125
150
0
25
50
75
100
125
150
175
200
I
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.0065Ohm;ID 180A;SOT-227;PD 480W;VGS +/-20 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 100V 180A 4-Pin SOT-227 制造商:Vishay Intertechnologies 功能描述:Single N-Channel 100 V 0.0065 Ohms Surface Mount Power Mosfet - SOT-227 制造商:Vishay Semiconductors 功能描述:N CH MOSFET, 100V, 180A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:HEXFET POWER MOSFET |
| FB180SA10PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET N SOT-227 TUBE 10 |
| FB182503ELV1NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 - Trays 制造商:Infineon Technologies 功能描述:Infineon Technologies FB182503ELV1NP Interface Misc |
| FB182503ELV2NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 |
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