參數(shù)資料
型號: FB180SA10
廠商: International Rectifier
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 4/8頁
文件大小: 137K
代理商: FB180SA10
FB180SA10
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
T = 25 C
°
1
10
100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
50
100
Q , Total Gate Charge (nC)
150
200
250
300
350
400
0
5
10
15
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
180 A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
D
10000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
I
10us
100us
1ms
10ms
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